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IS42S16160C - 256Mb Single Data Rate Synchronous DRAM

Download the IS42S16160C datasheet PDF. This datasheet also covers the IS42S83200C variant, as both devices belong to the same 256mb single data rate synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit.

All inputs and outputs are referenced to the rising edge of CLK.

Key Features

  • - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz/-7:143MHz/-75:133MHz - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS42S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42S83200C-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16160B 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S16160G 256Mb SYNCHRONOUS DRAM
IS42S16160J 256Mb SYNCHRONOUS DRAM
IS42S16160L 256Mb SYNCHRONOUS DRAM
IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42S83200C IS42S16160C 256 Mb Single Data Rate Synchronous DRAM APRIL 2009 General Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS42S83200C and IS42S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. Features - Single 3.3V ±0.3V power supply - Max.