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IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM

General Description

A0-A12 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQML DQMH Vdd Vss Vddq Vssq

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply IS42S16160 Vdd Vddq 3.3V 3.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cyc.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S16160B 256-MBIT SYNCHRONOUS DRAM
IS42S16160D 256-MBIT SYNCHRONOUS DRAM
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16320B 32M x 16 512Mb SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S16160 Vdd Vddq 3.3V 3.