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IS42S83200C - 256Mb Single Data Rate Synchronous DRAM

General Description

IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit.

All inputs and outputs are referenced to the rising edge of CLK.

Key Features

  • - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz/-7:143MHz/-75:133MHz - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS42S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S83200G 256Mb SYNCHRONOUS DRAM
IS42S83200J 256Mb SYNCHRONOUS DRAM
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IS42S81600D 128-MBIT SYNCHRONOUS DRAM

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IS42S83200C IS42S16160C 256 Mb Single Data Rate Synchronous DRAM APRIL 2009 General Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS42S83200C and IS42S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. Features - Single 3.3V ±0.3V power supply - Max.