IS42S83200C - 256Mb Single Data Rate Synchronous DRAM

Product Overview

ISSI

Datasheet Details

Part number	IS42S83200C
Manufacturer	ISSI
File Size	1.47 MB
Description	256Mb Single Data Rate Synchronous DRAM
Datasheet	IS42S83200C Datasheet
Additional preview pages of the IS42S83200C datasheet.

Product details

Description

IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit.

Features

- Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz/-7:143MHz/-75:133MHz - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS42S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and.

📁 Similar Datasheet

IS42S83200B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S83200D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S81600A - 128-MBIT SYNCHRONOUS DRAM (Integrated Circuit Solution)
IS42S86400B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)
IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

Other Datasheets by ISSI

IS42S83200G - 256Mb SYNCHRONOUS DRAM
IS42S83200J - 256Mb SYNCHRONOUS DRAM
IS42S83200L - 256Mb SYNCHRONOUS DRAM
IS42S81600B - 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600D - 128-MBIT SYNCHRONOUS DRAM
IS42S81600F - 128Mb SYNCHRONOUS DRAM

Published: Mar 8, 2019 |