Datasheet4U Logo Datasheet4U.com

IS42S83200G - 256Mb SYNCHRONOUS DRAM

Key Features

  • Clock frequency: 200,166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS42S83200B 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S83200D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S81600A 128-MBIT SYNCHRONOUS DRAM Integrated Circuit Solution
IS42S86400B 32M x 16 512Mb SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S83200C 256Mb Single Data Rate Synchronous DRAM
IS42S83200J 256Mb SYNCHRONOUS DRAM
IS42S83200L 256Mb SYNCHRONOUS DRAM
IS42S81600B 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600D 128-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.