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IS42S86400D - 512Mb SDRAM

Download the IS42S86400D datasheet PDF. This datasheet also covers the IS42R86400D variant, as both devices belong to the same 512mb sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42R86400D-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS42S86400B 32M x 16 512Mb SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S81600A 128-MBIT SYNCHRONOUS DRAM Integrated Circuit Solution
IS42S83200B 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S83200D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S86400F 512Mb SDRAM
IS42S81600B 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600D 128-MBIT SYNCHRONOUS DRAM
IS42S81600F 128Mb SYNCHRONOUS DRAM
IS42S83200C 256Mb Single Data Rate Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.