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IS42S86400B - 32M x 16 512Mb SYNCHRONOUS DRAM

Download the IS42S86400B datasheet PDF. This datasheet also covers the IS45S16320B variant, as both devices belong to the same 32m x 16 512mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

A0-A12 A0-A9, A11 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data I

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.3V IS42S86400B.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refres.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS45S16320B_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42S86400B IS42S16320B, IS45S16320B www.DataSheet4U.com 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.