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IS42SM32400E Datasheet 128mb Mobile Synchronous Dram

Manufacturer: ISSI (now Infineon)

Overview: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and precharge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Deep.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42SM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32160C 512Mb Mobile Synchronous DRAM
IS42SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM
IS42SM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42SM32400E Distributor