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IS42VM32400E - 128Mb Mobile Synchronous DRAM

Download the IS42VM32400E datasheet PDF. This datasheet also covers the IS42VM81600E variant, as both devices belong to the same 128mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS42VM81600E-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Overview

IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Dee.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42VM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM