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IS42VS16400E - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

General Description

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE Address Input Bank Select Address Data I/O System Clock Input Clock Enable CS RAS CAS Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDq GNDq NC Write Enable Lower Bye, Input/Output Mask U

Key Features

  • Clock frequency: 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 1.8V power supply.
  • LVCMOS interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.

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Full PDF Text Transcription for IS42VS16400E (Reference)

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IS42VS16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM MAY 2009 FEATURES • Clock frequency: 133 MHz • Fully synchronous; all signals referenced to ...

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ock frequency: 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 1.