IS42VS83200J
Description
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input.
Key Features
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access and pre- charge
- Programmable CAS latency: 2, 3
- Programmable Burst Length: 1, 2, 4, 8, and Full Page
- Programmable Burst Sequence: - Sequential and Interleave
- Auto Refresh (CBR) OPTIONS
- Configurations: - 32M x 8 - 16M x 16 - 8M x 32
- Power Supply IS42VSxxx - Vdd/Vddq = 1.8V
- Packages: x8 -TSOP II (54) x16 -TSOP II (54) x32 - TSOP II (86)
- Temperature Range: Industrial (-40 ºC to 85 ºC)
