Download the IS42VS83200J datasheet PDF.
This datasheet also covers the IS42VS16160J variant, as both devices belong to the same 256mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.
General Description
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
All input and output signals refer to the rising edge of the clock input.
Both write and read accesses to the SDRAM are burst oriented.
Key Features
Fully synchronous; all signals referenced to a
positive clock edge.
Internal bank for hiding row access and pre-
charge.
Programmable CAS latency: 2, 3.
Programmable Burst Length: 1, 2, 4, 8, and Full
Page.
Full PDF Text Transcription for IS42VS83200J (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS42VS83200J. For precise diagrams, and layout, please refer to the original PDF.
IS42VS83200J / IS42VS16160J / IS42VS32800J 32Mx8, 16Mx16, 8Mx32 256Mb Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Int...
View more extracted text
lly synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: – Sequential and Interleave • Auto Refresh (CBR) OPTIONS • Configurations: – 32M x 8 – 16M x 16 – 8M x 32 • Power Supply IS42VSxxx – Vdd/Vddq = 1.8V • Packages: x8 –TSOP II (54) x16 –TSOP II (54) x32 – TSOP II (86) • Temperature Range: Industrial (–40 ºC to 85 ºC) FEBRUARY 2015 DESCRIPTION ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
IS42VS83200J Datasheet
