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IS43DR16640BL - 1Gb DDR2 SDRAM

Download the IS43DR16640BL datasheet PDF. This datasheet also covers the IS46DR81280B variant, as both devices belong to the same 1gb ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

DDR2 SDRAM (128Mx8) TW-BGA Ball-out (Top-View) (8.00mm x 10.50mm) Symbol CK, CK# CKE CS# RAS#,CAS#,WE# A[13:0] BA[2:0] DQ[7:0] DQS, DQS# RDQS, RDQS# DM VDD VSS VDDQ VSSQ VREF VDDL VSSDL ODT NC Description Input clocks Clock enable Chip Select Command control pins Address Bank Address I/O Data Stro

Key Features

  • Clock frequency up to 400MHz.
  • 8 internal banks for concurrent operation.
  • 4-bit prefetch architecture.
  • Programmable CAS Latency: 3, 4, 5, 6 and 7.
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6.
  • Write Latency = Read Latency-1.
  • Programmable Burst Sequence: Sequential or Interleave.
  • Programmable Burst Length: 4 and 8.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 7.8 .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46DR81280B-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46DR81280B(L), IS43/46DR16640B(L) 1Gb (x8, x16) DDR2 SDRAM MARCH 2015 FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4-bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency-1  Programmable Burst Sequence: Sequential or Interleave  Programmable Burst Length: 4 and 8  Automatic and Controlled Precharge Command  Power Down Mode  Auto Refresh and Self Refresh  Refresh Interval: 7.