IS43DR16640DL Overview
Description
ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.
Key Features
- Standard Voltage: Vdd and Vddq = 1.8V ±0.1V
- Low Voltage (L): Vdd and Vddq = 1.5V ±0.075V
- SSTL_18-compatible for Standard Voltage
- SSTL_15-compatible for Low Voltage
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported
