M12L128324A-6BIG2C Datasheet | Elite Semiconductor Microelectronics Technology

Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) - All inputs are sampled at the positive going edge of the system clock - DQM for masking - Auto & self refresh - 64ms refresh period (4K cycle) M12L128324A (2C) Operation Temperature Condition -40~85°C 1M x 32 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L128324A-5BIG2C Max Freq. 200MHz Package 90 FBGA ments Pb-free M12L128324A-6BIG2C 166MHz 90 FBGA Pb-free M12L128324A-7BIG2C 143MHz 90 FBGA Pb-free GENERAL DESCRIPTION The M12L128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Elite Semiconductor Microelectronics Technology Inc. Publication Date: Sep. 2022 Revision: 1.2 1/45 ESMT M12L128324A (2C) Operation Temperature Condition -40~85°C BALL CONFIGURATION (TOP VIEW) (BGA90, 8mm X13mm X1mm Body, 0.8mm Ball Pitch) 3 456 A DQ26 DQ24 VSS VDD DQ23 DQ21 B DQ28 VDDQ VSSQ VDDQ VSSQ DQ19 C VSSQ DQ27 DQ25 DQ22 DQ20...