IS43DR83200B ISSI Datasheet

IS43DR83200B Key Features

• Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
• JEDEC standard 1.8V I/O (SSTL_18-patible)
• Differential data strobe (DQS, DQS)
• 4-bit prefetch architecture
• 4 internal banks for concurrent operation
• Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup
• Posted CAS and programmable additive latency (AL)
• WRITE latency = READ latency
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength, full and re