Datasheet Details
| Part number | IS43LD16160B |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 4.09 MB |
| Description | 256Mb Mobile LPDDR2 S4 SDRAM |
| Datasheet |
 IS43LD16160B Datasheet
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General Description
The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM.
The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.
This product uses a double-data-rate architecture to achieve high-speed operation.
Key Features
- Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
- High Speed Un-terminated Logic(HSUL_12) I/O Interface.
- Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
- Four-bit Pre-fetch DDR Architecture.
- Multiplexed, double data rate, command/address inputs.
- Four internal banks for concurrent operation.
- Bidirectional/differential data strobe per byte of d.