IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM

This page provides the datasheet information for the IS43LR32160B, a member of the IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM family.

Product Overview

ISSI

Part number	IS43LR32160B
Manufacturer	ISSI
File Size	1.09 MB
Description	4M x 32Bits x 4Banks Mobile DDR SDRAM
Datasheet	IS43LR32160B Datasheet
Additional preview pages of the IS43LR32160B datasheet.

The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 32-bit bus.

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional d.

IS431 - (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)
IS432 - (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)
IS435 - BUILT IN AMP TYPE LIGHT DETECTOR (Sharp Electrionic Components)
IS436 - BUILT IN AMP TYPE LIGHT DETECTOR (Sharp Electrionic Components)
IS437 - (IS437 / IS438) TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)
IS438 - (IS437 / IS438) TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)
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Published: Jun 28, 2016 |