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IS45RM16160E

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS45RM16160E datasheet preview

Datasheet Details

Part number IS45RM16160E
Datasheet IS45RM16160E IS42SM16160E Datasheet (PDF)
File Size 554.56 KB
Manufacturer ISSI (now Infineon)
Description 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45RM16160E page 2 IS45RM16160E page 3

IS45RM16160E Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS45RM16160E Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 8K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS45RM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45R16160D 256-MBIT SYNCHRONOUS DRAM
IS45R16320D 512Mb SDRAM
IS45R16320F 512Mb SDRAM

IS45RM16160E Distributor

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