IS45RM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM

Product Overview

ISSI

Part number	IS45RM32160E
Manufacturer	ISSI
File Size	592.91 KB
Description	4M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS45RM32160E Datasheet
Note	This datasheet PDF includes multiple part numbers: IS45RM32160E, IS42SM32160E. Please refer to the document for exact specifications by model.
Additional preview pages of the IS45RM32160E datasheet.

These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade).
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2, 3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.

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Published: Aug 2, 2016 |