IS45RM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

Product Overview

ISSI

Part number	IS45RM32800E
Manufacturer	ISSI
File Size	588.96 KB
Description	2M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS45RM32800E Datasheet
Note	This datasheet PDF includes multiple part numbers: IS45RM32800E, IS42SM32800E. Please refer to the document for exact specifications by model.
Additional preview pages of the IS45RM32800E datasheet.

These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2, 3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.

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Published: Aug 2, 2016 |