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IS45RM32800E

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS45RM32800E datasheet preview

Datasheet Details

Part number IS45RM32800E
Datasheet IS45RM32800E IS42SM32800E Datasheet (PDF)
File Size 588.96 KB
Manufacturer ISSI (now Infineon)
Description 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32800E page 2 IS45RM32800E page 3

IS45RM32800E Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS45RM32800E Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2, 3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45RM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45R16160D 256-MBIT SYNCHRONOUS DRAM
IS45R16320D 512Mb SDRAM
IS45R16320F 512Mb SDRAM

IS45RM32800E Distributor

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