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IS45RM32400H

IS45RM32400H is 1M x 32Bits x 4Banks Mobile Synchronous DRAM manufactured by ISSI.
IS45RM32400H datasheet preview

IS45RM32400H Datasheet

Part number IS45RM32400H
Datasheet IS45RM32400H / IS42VM32400H Datasheet PDF (Download)
File Size 611.35 KB
Manufacturer ISSI
Description 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400H page 2 IS45RM32400H page 3

IS45RM32400H Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS45RM32400H Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM

Related Datasheets

Part Number Description Manufacturer
IS45RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM ISSI
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM ISSI
IS45RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM ISSI

IS45RM32400H Distributor

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