Datasheet Details
| Part number | IS45S32400E |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 694.85 KB |
| Description | 128Mb SYNCHRONOUS DRAM |
| Datasheet |
 IS45S32400E Datasheet
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General Description
A0-A11
Row Address Input
A0-A7
Column Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ31 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
86 VSS 85 DQ15 84 VSSQ 83 DQ14 82 DQ
Key Features
- Clock frequency: 166, 143, 133 MHz.
- Fully synchronous; all signals referenced to a positive clock edge.
- Internal bank for hiding row access/precharge.
- Single Power supply: 3.3V + 0.3V.
- LVTTL interface.
- Programmable burst length.
- (1, 2, 4, 8, full page).
- Programmable burst sequence: Sequential/Interleave.
- Auto Refresh (CBR).
- Self Refresh.
- 4096 refresh cycles every 16ms (A2 grade) or 6.