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IS45S32400F - 4M x 32 128Mb SYNCHRONOUS DRAM

Download the IS45S32400F datasheet PDF. This datasheet also covers the IS42S32400F variant, as both devices belong to the same 4m x 32 128mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commerci.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42S32400F-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS45S32400F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS45S32400F. For precise diagrams, and layout, please refer to the original PDF.

IS42S32400F IS45S32400F 4M x 32 128Mb SYNCHRONOUS DRAM JUNE 2024 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive c...

View more extracted text
3, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S32400B 128-MBIT SYNCHRONOUS DRAM
IS45S32400E 128Mb SYNCHRONOUS DRAM
IS45S32160B 512Mb SYNCHRONOUS DRAM
IS45S32160B 512Mb SYNCHRONOUS DRAM
IS45S32160D 512Mb SDRAM
IS45S32160F 512Mb SDRAM
IS45S32200C1 SYNCHRONOUS DYNAMIC RAM
IS45S32200E SYNCHRONOUS DYNAMIC RAM
IS45S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS45S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM