IS45S32800G Datasheet | ISSI

FEATURES - Clock frequency: 200, 166, 143 MHz - Fully synchronous; all signals referenced to a positive clock edge - Internal bank for hiding row access/precharge - Single Power supply: 3.3V + 0.3V - LVTTL interface - Programmable burst length - (1, 2, 4, 8, full page) - Programmable burst sequence: Sequential/Interleave - Auto Refresh (CBR) - Self Refresh - 4096 refresh cycles every 16ms (A2 grade) or 64 ms (mercial, Industrial, A1 grade) - Random column address every clock cycle - Programmable CAS latency (2, 3 clocks) - Burst read/write and burst read/single write operations capability - Burst termination by burst stop and precharge mand OPTIONS - Package: 90-ball TF-BGA - Operating Temperature Range: mercial (0o C to +70o C) Industrial (-40o C to +85o C) Automotive Grade, A1 (-40o C to +85o C) Automotive Grade, A2 (-40o C to +105o C) OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks. KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 -5 5 10 200 100 4.8 6.5 -6 -7Unit 6 7 ns 10 7.5 ns 166 143 Mhz 100 133 Mhz 5.4 5.4 ns 6.5 5.5 ns ADDRESS TABLE Parameter Configuration Refresh Count ./Ind. A1 A2 Row Addresses Column Addresses Bank Address Pins Autoprecharge Pins 8M x 32 2M x 32 x 4 banks 4K / 64ms 4K / 64ms 4K / 16ms A0 - A11 A0 - A8 BA0,...