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IS45SM16160E

IS45SM16160E is 4M x 16Bits x 4Banks Mobile Synchronous DRAM manufactured by ISSI.
IS45SM16160E datasheet preview

IS45SM16160E Datasheet

Part number IS45SM16160E
Datasheet IS45SM16160E / IS42SM16160E Datasheet PDF (Download)
File Size 554.56 KB
Manufacturer ISSI
Description 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45SM16160E page 2 IS45SM16160E page 3

IS45SM16160E Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS45SM16160E Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 8K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM

Related Datasheets

Part Number Description Manufacturer
IS45SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM ISSI
IS45SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM ISSI
IS45SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM ISSI

IS45SM16160E Distributor

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