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IS45VM16800E - 128Mb Mobile Synchronous DRAM

Download the IS45VM16800E datasheet PDF. This datasheet also covers the IS42VM81600E variant, as both devices belong to the same 128mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Dee.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42VM81600E-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS45VM16800E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS45VM16800E. For precise diagrams, and layout, please refer to the original PDF.

IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all ...

View more extracted text
4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS • Configurations: 16M x 8, 8M x 16, 4M x 32 • Power Supply IS42VMxxx – Vdd/Vddq = 1.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400E 128Mb Mobile Synchronous DRAM
IS45VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM