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IS46DR32160C Datasheet 16mx32 512mb Ddr2 Dram

Manufacturer: ISSI (now Infineon)

Overview: IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

The 512Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and support pact designs.

Key Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 4 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, and 6 supported.
  • Posted CAS and programmable additive latency.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS46DR32801A 8Mx32 256Mb DDR2 DRAM
IS46DR32801B 256Mb DDR2 DRAM
IS46DR16128C DDR2 DRAM
IS46DR16160B DDR2 DRAM
IS46DR16320B 512Mb DDR2 SDRAM
IS46DR16320D DDR2 DRAM
IS46DR16320E DDR2 DRAM
IS46DR16640B 1Gb DDR2 SDRAM
IS46DR16640BL 1Gb DDR2 SDRAM
IS46DR16640C DDR2 DRAM

IS46DR32160C Distributor