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IS46LR16200D Datasheet

Manufacturer: ISSI (now Infineon)
IS46LR16200D datasheet preview

IS46LR16200D Details

Part number IS46LR16200D
Datasheet IS46LR16200D-ISSI.pdf
File Size 1.72 MB
Manufacturer ISSI (now Infineon)
Description 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS46LR16200D page 2 IS46LR16200D page 3

IS46LR16200D Overview

The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

IS46LR16200D Key Features

  • JEDEC standard 1.8V power supply
  • Two internal banks for concurrent operation
  • MRS cycle with address key programs
  • CAS latency 2, 3 (clock)
  • Burst length (2, 4, 8, 16)
  • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional data strobe per byte of data (DQS)

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