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IS46LR16128B - 2Gb Mobile DDR SDRAM

Download the IS46LR16128B datasheet PDF. This datasheet also covers the IS46LR32640B variant, as both devices belong to the same 2gb mobile ddr sdram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS46LR32640B-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Overview

IS43/46LR32640B IS43/46LR16128B 2Gb (x16, x32) Mobile DDR SDRAM Preliminary.

Key Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional data.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS46LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16160G 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16320D 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16400C 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16640A 16M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16640C 1Gb Mobile DDR SDRAM