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IS46TR16512A - 512M x 16 8Gb DDR3 SDRAM

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 933 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burs.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46TR16512AL 512M x 16 8Gb DDR3 SDRAM
IS46TR16512B 8Gb DDR3 SDRAM
IS46TR16512BL 8Gb DDR3 SDRAM
IS46TR16128B 2Gb DDR3 SDRAM
IS46TR16128BL 2Gb DDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 512Mx16(dual die)  Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE FEBRUARY 2018  Refresh Interval: 7.