IS46TR16512B - 8Gb DDR3 SDRAM

Product Overview

ISSI

Part number	IS46TR16512B
Manufacturer	ISSI
File Size	3.73 MB
Description	8Gb DDR3 SDRAM
Datasheet	IS46TR16512B Datasheet
Additional preview pages of the IS46TR16512B datasheet.

RAS#.

CAS#.

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 933 MHz.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Le.

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 19, 2024 |