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IS52VM32400H

Manufacturer: ISSI (now Infineon)

IS52VM32400H datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS52VM32400H datasheet preview

IS52VM32400H Datasheet Details

Part number IS52VM32400H
Datasheet IS52VM32400H IS42SM32400H Datasheet (PDF)
File Size 611.31 KB
Manufacturer ISSI (now Infineon)
Description 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS52VM32400H page 2 IS52VM32400H page 3

IS52VM32400H Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS52VM32400H Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS52RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS52SM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS52VM32400H Distributor

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