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IS61C3216 - 32K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

organized as 32,768 words by 16 bits.

ISSI's high-performance CMOS technology.

able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.

Key Features

  • High-speed access time: 10, 12, 15, and 20 ns.
  • CMOS low power operation.
  • 450 mW (typical) operating.
  • 250 µW (typical) standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • I/O compatible with 3.3V device.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type II) D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61C3216 32K x 16 HIGH-SPEED CMOS STATIC RAM ISSI® JANUARY 1998 FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 450 mW (typical) operating — 250 µW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply • I/O compatible with 3.3V device • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type II) DESCRIPTION The ISSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reli- able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.