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IS61C3216AL - 32K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

organized as 32,768 words by 16 bits.

using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 12 ns.
  • Low Active Power: 175 mW (typical).
  • Low Standby Power: 1 mW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.
  • Available in 44-pin SOJ package and 44-pin TSOP (Type II).
  • Commercial and Industrial temperature ranges available.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61C3216AL 32K x 16 HIGH-SPEED CMOS STATIC RAM JANUARY 2020 FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin SOJ package and 44-pin TSOP (Type II) • Commercial and Industrial temperature ranges available • Lead-free available DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.