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IS61LV25616 - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

RAM organized as 262,144 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time:.
  • 7, 8, 10, 12, and 15 ns.
  • CMOS low power operation.
  • Low stand-by power:.
  • Less than 5 mA (typ. ) CMOS stand-by.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available ISSI ® AUGUST 2000.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV5128 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM

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IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 7, 8, 10, 12, and 15 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available ISSI ® AUGUST 2000 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.