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IS61LV25616 - 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

RAM organized as 262,144 words by 16 bits.

It is fabricated using 1+51's high-performance CMOS technology.

Key Features

  • • • • • • 256K x 16 HIGH SPEED.

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Datasheet Details

Part number IS61LV25616
Manufacturer Integrated Circuit Solution
File Size 486.31 KB
Description 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61LV25616 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV25616 FEATURES • • • • • 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available DESCRIPTION The 1+51 IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.