IS61QDPB22M18A Datasheet | ISSI

FEATURES - 1Mx36 and 2Mx18 configuration available. - On-chip Delay-Locked Loop (DLL) for wide data valid window. - Separate independent read and write ports with concurrent read and write operations. - Synchronous pipeline read with EARLY write operation. - Double Data Rate (DDR) interface for read and write input ports. - 2.5 Cycle read latency. - Fixed 2-bit burst for read and write operations. - Clock stop support. - Two input clocks (K and K#) for address and control registering at rising edges only. - Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. DESCRIPTION The and are synchronous, high- performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the for a description of the basic operations of these SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Read and write performed in double data rate. The following are registered internally on the rising edge of the K clock: - Read address - Read enable - Write enable - Data valid pin (QVLD). - Data-in for early writes - +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. - HSTL input and output interface. - Registered addresses, write and read controls, byte writes, data in, and data outputs. - Full data coherency. The following are registered on the rising edge of the K# clock: - Write address - Byte writes - Data-in for second burst addresses - Boundary scan using limited set of JTAG 1149.1 functions. - Byte Write capability. - Fine ball grid array (FBGA) package option: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array - Programmable impedance output drivers via 5x user-supplied precision resistor. - ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#. - The end of...