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IS61WV20488BLL - 2M x 8 HIGH-SPEED CMOS STATIC RAM

This page provides the datasheet information for the IS61WV20488BLL, a member of the IS64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM family.

Description

IS64WV20488BLL are very high-speed, low power, 2M-word by 8-bit CMOS static RAM.

Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE op- tions.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
  • Vdd.

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Datasheet preview – IS61WV20488BLL

Datasheet Details

Part number IS61WV20488BLL
Manufacturer ISSI
File Size 307.34 KB
Description 2M x 8 HIGH-SPEED CMOS STATIC RAM
Datasheet download datasheet IS61WV20488BLL Datasheet
Additional preview pages of the IS61WV20488BLL datasheet.

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Full PDF Text Transcription

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IS61WV20488ALL IS61/64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM June 2014 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE op- tions • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V – Vdd 2.4V to 3.6V (IS61/64WV20488BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.
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