IS61WV20488FALL
IS61WV20488FALL is 2M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM manufactured by ISSI.
FEATURES
- High-speed access time: 8ns, 10ns, 20ns
- High- performance, low power CMOS process
- Multiple center power and ground pins for greater noise immunity
- TTL patible inputs and outputs
- Single power supply
- 1.65V-2.2V VDD (IS61WV20488FALL)
- 2.4V-3.6V VDD (IS61/64WV20488FBLL)
- Packages available :
- 44 pin TSOP (Type II)
- 48 ball mini BGA (6mm x 8mm)
- 54 pin TSOP (Type II)
- Industrial and Automotive temperature support
- Lead-free available
- Data Control for upper and lower bytes
DESCRIPTION
The ISSI IS61/64WV20488FALL/BLL are high-speed, 16M bit static RAMs organized as 2048K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory.
The devices are packaged in the JEDEC standard 44-Pin TSOP (TYPE II), 48-pin mini BGA (6mm x 8mm), and 54-Pin TSOP (TYPE II)..
FUNCTIONAL BLOCK DIAGRAM
A0
- A20
VDD GND I/O 0
- I/O7
DECODER
I/ O DATA CIRCUIT
2048K x 8 MEMORY ARRAY
COLUMN /IO
CS# or CS1#/CS2
OE# WE#
CONTROL CIRCUIT
Copyright © 2019 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
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