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IS61WV51232ALL - 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

by 32 bits.

CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) spe.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV51232ALS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51232BLL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51232BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MARCH 2024 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.