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IS61WV51232BLL - 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV51232BLL datasheet PDF. This datasheet also covers the IS61WV51232ALL variant, as both devices belong to the same 512k x 32 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

by 32 bits.

CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) spe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV51232ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MARCH 2024 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.