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IS62C25616EL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65C25616EL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 5.0uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single 5V ± 10 % power supply.
  • Package : 44-pin TSOP (Type II).
  • Three state outputs.
  • Commercial, Industrial and Automotive temperature support.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS62C256 32K x 8 LOW POWER CMOS STATIC RAM
IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62C25616EL, IS65C25616EL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM AUGUST 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65C25616EL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.