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IS62WV102416DALL - ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 25 µA (typical) CMOS standby.
  • CMOS for optimum speed and power and TTL compatible interface levels.
  • Single power supply.
  • 1.65V~1.98V VDD (IS62/65WV102416DALL).
  • 2.2V~3.6V VDD (IS62/65WV102416DBLL).
  • Fully static operation: no clock or refresh required.
  • Industrial and Automotive temperature support.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS62WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416FALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416FBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM JANUARY 2015 KEY FEATURES  High-speed access time: 45ns, 55ns.  CMOS low power operation – 25 µA (typical) CMOS standby  CMOS for optimum speed and power and TTL compatible interface levels  Single power supply – 1.65V~1.98V VDD (IS62/65WV102416DALL) – 2.2V~3.6V VDD (IS62/65WV102416DBLL)  Fully static operation: no clock or refresh required  Industrial and Automotive temperature support DESCRIPTION The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology.