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IS62WV25616DALL - ULTRA LOW POWER CMOS STATIC SRAM

General Description

256K words by 16 bits.

Key Features

  • High-speed access time: 35, 45, 55 ns.
  • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free a.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
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IS62WV2568DALL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2015 FEATURES • High-speed access time: 35, 45, 55 ns • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • 2 CS option available DESCRIPTION The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.