IS64C1024AL Datasheet | ISSI

FEATURES - High-speed access time: 12, 15 ns - Low active power: 160 m W (typical) - Low standby power: 1000 µW (typical) CMOS standby - Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Single 5V (±10%) power supply - mercial, industrial, and automotive tempera- ture ranges available - Lead free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61C1024AL/IS64C1024AL is a very high- speed, low power, 131,072-word by 8-bit CMOS static RAMs.They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2.The active LOWWrite Enable (WE) controls both writing and reading of the memory. The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin s TSOP (Type I, 8 x 13.4) packages. A0-A16 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 128K x 8 MEMORY ARRAY COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT Copyright © 2022 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not remend the use of any of its products in life support applications where the failure or malfunction of the product...