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IS64WV2568FBLL - 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Download the IS64WV2568FBLL datasheet PDF. This datasheet also covers the IS64WV2568FALL variant, as both devices belong to the same 256k x 8 high speed aynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 8, 10ns, 12ns.
  • Low Active Current: 35mA (Max. , 10ns, I-temp).
  • Low Standby Current: 10 mA (Max. , I-temp).
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV2568FALL).
  • 2.4V-3.6V VDD (IS61/64WV2568FBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV2568FALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IS64C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV2568FALL 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61/64WV2568FALL IS61/64WV2568FBLL 256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM AUGUST 2020 KEY FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD(IS61/64WV2568FALL) – 2.4V-3.6V VDD (IS61/64WV2568FBLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM A0 – A17 DECODER 256K x 8 MEMORY ARRAY DESCRIPTION The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.