Part IS64WV51216EDBLL
Description 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Manufacturer ISSI
Size 587.88 KB
ISSI

IS64WV51216EDBLL Overview

Description

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single Power Supply – Vdd = 1.65V to 2.2V (IS61WV51216EDALL) – Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
  • Packages available: – 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support