IS64WV51216EDBLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS64WV51216EDBLL, a member of the IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM family.

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ISSI

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Datasheet Details

Part number	IS64WV51216EDBLL
Manufacturer	ISSI
File Size	587.88 KB
Description	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS64WV51216EDBLL Datasheet
Additional preview pages of the IS64WV51216EDBLL datasheet.

IS64WV51216EDBLL Product details

Description

IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

cated using ISSI's high-performance CMOS technology.

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single Power Supply.
Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).

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Published: Jun 10, 2016 |