IS64WV51216EEBLL - 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS64WV51216EEBLL, a member of the IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM family.

Product Overview

ISSI

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Datasheet Details

Part number	IS64WV51216EEBLL
Manufacturer	ISSI
File Size	866.18 KB
Description	512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Datasheet	IS64WV51216EEBLL Datasheet
Additional preview pages of the IS64WV51216EEBLL datasheet.

IS64WV51216EEBLL Product details

Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Features

High-speed access time: 8ns, 10ns, 20ns.
Single power supply.
1.65V-2.2V VDD (IS61WV51216EEALL).
2.4V-3.6V VDD (IS61/64WV51216EEBLL).
Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
Package Available: - 44-pin TSOP (Type II) - 48-pin TSOP (Type I) - 48-ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II).
Three state outputs.
Indu.

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Published: Feb 18, 2024 |