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IS65WV2568DBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV2568DBLL datasheet PDF. This datasheet also covers the IS62WV2568DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

256K words by 8 bits.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vcc (IS62/65WV2568DALL).
  • 2.5V.
  • 3.6V Vcc (IS62/65WV2568DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV2568DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS65WV2568DBLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV2568DBLL. For precise diagrams, and layout, please refer to the original PDF.

IS62/65WV2568DALL IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power ...

View more extracted text
FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vcc (IS62/65WV2568DALL) – 2.5V–3.6V Vcc (IS62/65WV2568DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.

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