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IS65WV2568EALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV2568EALL datasheet PDF. This datasheet also covers the IS62WV2568EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 18 mA (max) at 85°C.
  • CMOS Standby Current: 5.4uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62WV2568EALL).
  • 2.2V-3.6V VDD (IS62/65WV2568EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV2568EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS65WV2568EALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV2568EALL. For precise diagrams, and layout, please refer to the original PDF.

IS62WV2568EALL IS62/65WV2568EBLL 256Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MARCH 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operati...

View more extracted text
FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV2568EALL) – 2.2V-3.6V VDD (IS62/65WV2568EBLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design technique

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