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IS66WV51216ALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

General Description

bit static RAMs organized as 512K words by 16 bits.

fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 55ns.
  • CMOS low power operation.
  • mW (typical) operating.
  • µW (typical) CMOS standby.
  • Single power supply.
  • 1.7V--1.95V Vdd (66WV51216ALL) (70ns).
  • 2.5V--3.6V Vdd (66WV51216BLL) (55ns).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby • Single power supply – 1.7V--1.95V Vdd (66WV51216ALL) (70ns) – 2.5V--3.6V Vdd (66WV51216BLL) (55ns) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.