Datasheet Summary
IS66WV51216ALL IS66WV51216BLL
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
JANUARY 2010
Features
- High-speed access time: 55ns
- CMOS low power operation
- mW (typical) operating
- µW (typical) CMOS standby
- Single power supply
- 1.7V--1.95V Vdd (66WV51216ALL) (70ns)
- 2.5V--3.6V Vdd (66WV51216BLL) (55ns)
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process...
